Emerging Powerhouses: The Asia Pacific RF GaN Market by Type
The Asia Pacific region is becoming a key growth corridor for radio-frequency gallium nitride (RF GaN) technologies, especially as wireless infrastructure, aerospace/defence applications and next-generation communications systems surge. In the forecast period 2017–2023, the report reveals how different substrate or device-type segments—specifically GaN-on-SiC, GaN-on-Silicon, and GaN-on-Diamond—are evolving in the region.
Market Growth Highlights
In 2017 the total Asia Pacific RF GaN market by type stood at approximately USD 45.02 million for the GaN-on-SiC segment. In the same year, the GaN-on-Silicon segment was around USD 23.84 million and GaN-on-Diamond about USD 5.89 million.
By 2023, projections indicate the GaN-on-SiC segment will reach USD 154.25 million; GaN-on-Silicon will hit USD 78.25 million; and GaN-on-Diamond is estimated at USD 15.58 million.
The compound annual growth rate (CAGR) for GaN-on-SiC is estimated at roughly 23.47% between 2018 and 2023.
Why GaN-on-SiC Dominates — and Why the Others Matter
The GaN-on-SiC (silicon carbide) segment leads because of its superior thermal conductivity, high breakdown voltage and strong performance in high-power RF applications. That makes it well suited for base-stations, radar, satellite communications and other demanding environments. As infrastructure upgrades continue across Asia Pacific—especially in China, India, Southeast Asia and Australia—the demand for higher-efficiency and higher-power RF components spurs growth in this segment.
GaN-on-Silicon offers a cost-advantage and compatibility with conventional silicon manufacturing infrastructure. While its performance may not match SiC in every metric, its economics make it attractive for many applications—so its growth is notable.
GaN-on-Diamond, though the smallest segment in absolute value, represents a high-performance frontier: ultra-high thermal conductivity, high frequency operation, and potential applications in advanced defence or high-end telecommunications. It’s more niche today, but its growth trajectory is interesting.
Regional Dynamics & Drivers
Across the Asia Pacific region, several factors combine to fuel the RF GaN market by type:
5G and beyond networks: As mobile operators invest in densified networks, Massive MIMO, mmWave deployments and small-cells, RF front-end modules with GaN technology gain importance. High-power, high-efficiency amplifiers benefit from GaN-on-SiC and GaN-on-Silicon.
Defence & aerospace spending: Countries in the region are bolstering radar, EW (electronic warfare) and satellite communication systems. GaN's advantages in size, weight, power and performance help push adoption.
Infrastructure upgrade momentum: In emerging markets (India, Southeast Asia, Africa-adjacent Asia Pacific), telecom and broadband infrastructure upgrades generate demand for RF components—and GaN is increasingly chosen.
Manufacturing & cost factors: GaN-on-Silicon’s growth illustrates that cost-sensitive applications favour substrates and processes more compatible with existing silicon fab infrastructure. Meanwhile GaN-on-SiC command premium pricing given its superior performance.
Technology maturity and supply-chain development: As GaN production processes mature, yield improves, costs fall and volumes rise. This helps the market scale across all types.
Forecast Outlook & Implications
Looking ahead to 2023, the sizeable growth in GaN-on-SiC (reaching ~USD 154 m) and the strong showing of GaN-on-Silicon (~USD 78 m) indicate that industry stakeholders can no longer treat GaN as niche: it is becoming mainstream in RF modules in Asia Pacific.
For component manufacturers, this means strategic emphasis on GaN-on-SiC process technologies, supply-chain integration (substrates, epitaxy, packaging) and partnerships with telecom/defence OEMs. For investors, the high-single-digit to low-double-digit billions of dollars addressable market in Asia Pacific makes this a compelling sector.
The relatively smaller but growing GaN-on-Diamond segment (projected ~USD 15.6 m in 2023) suggests an area for innovation: companies investing early could capture the high-end premium performance niche.
Challenges & Considerations
While the growth story is strong, several caveats apply:
Cost pressures: GaN-on-SiC remains more expensive than legacy silicon or GaN-on-Silicon options. Price erosion over time is needed for broader adoption.
Yield/manufacturing maturity: Some substrate types (especially GaN-on-Diamond) still face hurdles in manufacturing yield, defect densities and volume scaling.
Competitive alternatives: Some applications might still rely on LDMOS (laterally diffused MOS) or other RF technologies, slowing the transition.
Geopolitical/supply-chain risk: Asia Pacific spans many countries; tariffs, export controls, substrate supply constraints or localisation mandates can impact market dynamics.
Application specificity: Not all RF markets demand GaN’s full performance. The value-case must align to justify the substrate premium.
Strategic Insights for Stakeholders
Manufacturers: Should prioritise GaN-on-SiC for high-performance and premium applications; invest in cost reduction for GaN-on-Silicon to expand into broader segments; explore GaN-on-Diamond for next-generation applications.
OEMs (Telecom/Defence): Need to assess the trade-offs between substrate types—performance vs cost vs scale—and plan for module designs that exploit GaN’s advantages (smaller size, higher power, cooling benefits).
Investors/Analysts: The CAGR of ~23.5% for GaN-on-SiC in Asia Pacific signals strong upside; look for companies with vertically integrated GaN value chains, substrate control, epi-wafer capacity and partnerships in region.
Policy Makers/Region-Planners: Encouraging local GaN manufacturing clusters (substrate, epi-wafer, packaging) could capture value domestically, reduce import dependencies, and support high-tech infrastructure build-out.